IV.R.12. Monolithic Integrated Devices for Multidomain Sensors. The Scientific and Technology Objective is to develop an enabling technology for future infrared sensor upgrades beyond 2nd generation FLIR. These upgrades include active/passive interrogation, multispectral detection, and increased local processing in a single FLIR unit. The enabling technology will be demonstrated by the growth of electro-optic devices directly on silicon. The specific objectives are: In FY96, demonstrate a significant reduction in defect density for growth of CdZnTe and GaAs on silicon (to around 105/cm2) utilizing a recently developed molecular beam epitaxy (MBE) growth technique already demonstrated for CdTe on GaAs. In FY97, demonstrate bulk quality CdZnTe grown on silicon and fabricate test HgCdTe array on silicon in FY98. In FY99, demonstrate high quality electro-optic devices monolithically integrated with silicon electronic devices.
Supports: Future battlespace visualization involving Army thermal imaging systems in tanks, helicopters, missiles, and autonomous scout vehicles, Mounted Battlespace Battle Lab.
|STO Manager:||TSO:||TRADOC POC:|
|William Clark III||Catherine Kominos||Charles Campbell|